2SD2240J-S NPN三极管 150V 50mA 150MHz 185~330 1V SOT-523/SC-75 marking/标记 PS 高击穿电压低噪声放大
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 150V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 185~330 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SB1463J Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV |
| 描述与应用 | NPN硅外延平面型 对于高击穿电压低噪声放大 互补2SB1463J的 特点 •高集电极 - 发射极电压（基本打开）VCEO •低噪声电压NV |
| 规格书PDF |
