2SJ132-Z-E1 P沟道MOS功率场效应管 -20V 2A 0.25ohm SOT-252 marking/标记 J132 用于开关电路
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.25Ω -1A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--3.0V |
| 耗散功率PdPower Dissipation | 20W |
| Description & Applications | MOS FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOSFET FOR SWITCHING Gate drive available at logic level (VGS = −4 V) High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) 2SJ132-Z is a lead process product and is ideal for mounting a hybrid IC |
| 描述与应用 | MOS场效应功率晶体管 P沟道功率MOSFET 用于开关 栅极驱动逻辑电平（VGS=-4 V） 高电流控制由于在小尺寸，低RDS（on）（≅0.25Ω） 2SJ132-Z是一款铅工艺产品，非常适合安装一个混合IC |
| 规格书PDF |
