2SJ163-Q P沟道结型场效应管 65 V -1.0~-3.0mA SOT-23 marking/标记 4MQ 低导通电阻/低噪声
最大源漏极电压VdsDrain-Source Voltage | 65 V |
栅源极击穿电压V(BR)GSGate-Source Voltage | 65 V |
漏极电流(Vgs=0V)IDSSDrain Current | -1.0~-3.0mA |
关断电压Vgs(off)Gate-Source Cut-off Voltage | 1.5~3.5V |
耗散功率PdPower Dissipation | 150mW/0.15W |
Description & Applications | Silicon P-Channel Junction FET 2SJ163 For general switching Complementary to 2SK1103 Features Low ON-resistance Low-noise characteristics |
描述与应用 | 硅P沟道结型场效应管 2SJ163 对于一般的切换 互补2SK1103 特点 低导通电阻 低噪声特性 |
规格书PDF |