2SJ163-Q P沟道结型场效应管 65 V －1.0~－3.0mA SOT-23 marking/标记 4MQ 低导通电阻/低噪声
| 最大源漏极电压VdsDrain-Source Voltage | 65 V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | 65 V |
| 漏极电流(Vgs=0V)IDSSDrain Current | －1.0~－3.0mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | 1.5~3.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon P-Channel Junction FET 2SJ163 For general switching Complementary to 2SK1103 Features Low ON-resistance Low-noise characteristics |
| 描述与应用 | 硅P沟道结型场效应管 2SJ163 对于一般的切换 互补2SK1103 特点 低导通电阻 低噪声特性 |
| 规格书PDF |
