2SJ205 P沟道MOS场效应管 -16V 500mA 1.5ohm SOT-89 marking/标记 PD 高速开关 直接驱动5V电源IC
最大源漏极电压VdsDrain-Source Voltage | -16V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 16V |
最大漏极电流IdDrain Current | -500mA/-0.5A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 1.5Ω @-300mA,-4V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.4--2.4V |
耗散功率PdPower Dissipation | 2W |
Description & Applications | MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance |
描述与应用 | MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻 |
规格书PDF |