2SJ355 P沟道MOS场效应管 -30V 2A 0.26ohm SOT-89 marking/标记 PQ 高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.26Ω @-1A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率PdPower Dissipation | 20W |
| Description & Applications | FEATURES • Can be directly driven by 5-V IC • Low ON resistance RDS(on) = 0.60 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.35 Ω MAX. @VGS = –10 V, ID = –1.0 A |
| 描述与应用 | •可直接驱动5-V IC •低导通电阻 RDS（ON）= 0.60Ω最大。 @ VGS=-4 V，ID= -1.0à RDS（ON）= 0.35Ω最大。 @ VGS=-10V，ID=-1.0 A |
| 规格书PDF |
