2SJ451ZK P沟道MOS场效应管 -20V 200mA 0.23ohm SOT-23 marking/标记 ZK 低导通电阻 低驱动功率
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -0.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.23Ω @-100mA,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). |
| 描述与应用 | •低导通电阻。 •低驱动功率 •2.5 V门驱动装置。 •小包装（MPAK）， |
| 规格书PDF |
