2SJ632-TD P沟道MOS场效应管 -60V -2A 0.275ohm SOT-89 marking/标记 GA 低导通电阻 超高速开关 4V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.275Ω @-10A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.2--2.6V |
| 耗散功率PdPower Dissipation | 1.5W |
| Description & Applications | Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. |
| 描述与应用 | ·低导通电阻。 ·超高速开关。 ·4V驱动器 |
| 规格书PDF |
