2SK1113 N沟道MOSFET TO-252/D-PAK marking/标记
| 最大源漏极电压Vds Drain-Source Voltage | 120V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | ±20V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.33Ω~0.42Ω@Vgs=10v，ID=1.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8V~2V@ Vds=10v,Id=1mA |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | |
| 描述与应用 |
| 规格书PDF |
