2SK1334BY N沟道MOSFET 200V 1A SOT-89 marking/标记 BY 低导通电阻/高速开关/无二次击穿
| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2-4V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Silicon N Channel MOS FET High speed power switching Features Silicon N Channel MOS FET Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter |
| 描述与应用 | 硅N沟道MOS FET 高速功率开关 特性 硅N沟道MOS FET 低导通电阻 高速开关 低驱动电流 无二次击穿 适用于开关稳压器和DC-DC转换 |
| 规格书PDF |
