2SK160 N沟道结型场效应管 30v 0.5~1.5mA SOT-23 marking/标记 K4 模拟开关
| 最大源漏极电压VdsDrain-Source Voltage | 30v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -30v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.5~1.5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.25~-4.5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR The 2SK160 , 2SK160A are designed for hybrid IC which is designed for use in analog-switch Micro package |
| 描述与应用 | N-沟道硅结型场效应晶体管 2SK1602SK160A混合IC设计的，其目的是用于在模拟开关 微型封装 |
| 规格书PDF |
