2SK1945 N沟道MOSFET 900V 5A TO-252/D-PAK marking/标记 K1945 高速功率/低导通电阻/高速开关/低驱动电流
最大源漏极电压Vds Drain-Source Voltage | 900V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | 5A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2Ω/Ohm @2.5A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 2.5-3.5V |
耗散功率Pd Power Dissipation | 80W |
Description & Applications | FAP-IIA Series Switching Regulators UPS DC-DC converters General Purpose Power Amplifier Features Silicon N-Channel MOS FET High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof |
描述与应用 | FAP-IIA系列 开关稳压器 UPS DC-DC转换器 通用功率放大器 特性 硅N沟道MOS FET 高速开关 低导通电阻 无二次击穿 低驱动功率 高电压 VGS=±30V保证 防雪崩 |
规格书PDF |