2SK1961 N沟道结型场效应管 15v 40~75mA SOT-252 marking/标记 K1961 高频低噪声放大器
| 最大源漏极电压VdsDrain-Source Voltage | 15v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -15v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 40~75ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -1.2~-4.5v |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | Silicon N-Channel Junction FET Applications High-frequency low-noise amp applications Features Adoption of FBET process Very low noise figure |
| 描述与应用 | 硅N沟道结型场效应晶体管应用 高频低噪声放大器的应用 特点 采纳FBET过程 非常低的噪声图 |
| 规格书PDF |
