2SK2099 N沟道MOSFET 250V 6A TO-252/D-PAK marking/标记 高速开关/低导通电阻/无二次击穿/低驱动功率/高电压
最大源漏极电压Vds Drain-Source Voltage | 250V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | 6A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.6Ω/Ohm @3A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 2.5-3.5V |
耗散功率Pd Power Dissipation | 20W |
Description & Applications | N-CHANNEL MOS FET High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof |
描述与应用 | N沟道MOS-FET 特性 N沟道MOS FET 高速开关 低导通电阻 无二次击穿 低驱动功率 高电压 VGS=±30V保证 防雪崩 |
规格书PDF |