2SK2199 N沟道MOSFET 250V 800mA/0.8A TO-252/TP-FA marking/标记 K2199 低导通电阻/超高速开关/低电压驱动
| 最大源漏极电压Vds Drain-Source Voltage | 250V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 800mA/0.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.5Ω/Ohm @400mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-2.5V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Features Ultrahigh-Speed Switching Applications Low ON resistance Ultrahigh-speed switching Low-voltage drive |
| 描述与应用 | 特性 超高速开关应用 低导通电阻 超高速开关 低电压驱动 |
| 规格书PDF |
