2SK2334STL N沟道MOSFET 60V 20A TO-252/D-PAK marking/标记 K2334 低导通电阻/高速开关/低电压驱动/DC-DC转换
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 20A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.04Ω/Ohm @10A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.25V |
| 耗散功率Pd Power Dissipation | 30W |
| Description & Applications | Silicon N-Channel MOS FET Features High speed power switching Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for switching regulator,DC-DC converter Avalanche ratings |
| 描述与应用 | 硅N沟道MOS FET 特性 高速功率开关 低导通电阻 高速开关 低驱动电流 4V栅极驱动器可以驱动自5V电源 合适的开关稳压器，DC-DC转换 雪崩额定值 |
| 规格书PDF |
