2SK2373ZE N沟道MOSFET 30V 400mA/0.4A SOT-23/SC-59 marking/标记 ZE 低导通电阻/高速开关/低电压驱动/DC-DC转换
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 400mA/0.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1Ω/Ohm @10A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon N-Channel MOS FET Features Silicon N-Channel MOS FET Low frequency power switching Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch |
| 描述与应用 | 硅N沟道MOS FET 特性 硅N沟道MOS FET 低频电源开关 低导通电阻 小型封装 低驱动电流 4 V栅极驱动器可驱动从5 V电源 适合低信号负载开关 |
| 规格书PDF |
