2SK337209L N沟道MOSFET 20V 2mA SOT-523 marking/标记 1H 低频率阻抗变换/高互导GM/低噪声增益控制放大器电压的NV
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 2mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon Junction FETs (Small Signal) Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone Features Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone High mutual conductance gm Low noise voltage of NV |
| 描述与应用 | 硅结场效应晶体管（小信号） 硅N沟道结 对于低频率阻抗转换驻极体电容式麦克风 特性 硅N沟道结 在低频率的阻抗变换 对于驻极体电容式麦克风 高互导GM 低噪声电压的NV |
| 规格书PDF |
