2SK611-Z-T1 N沟道MOSFET 30V 1A TO-252/D-PAK marking/标记 K611 无二次击穿/4栅极驱动电压逻辑电平
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.003Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-3.0V |
| 耗散功率Pd Power Dissipation | 10W |
| Description & Applications | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING Features Fast switching Silicon N-Channel POWER MOS FET Industrial use Suitable for switching power supplies，actuator controls，and pulse circuits Low Ciss No second breakdown 4 V gate drive-logical level |
| 描述与应用 | 用于高速开关的N沟道MOSFET 特性 快速开关 硅N沟道功率MOS FET 工业用 适用于开关电源，执行器控制装置和脉冲电路 低Ciss 无二次击穿 4栅极驱动电压逻辑电平 |
| 规格书PDF |
