2SK690-Q MESFET-N沟道 10V 220mA-380mA -6V SOT-89 marking/标记 LQ 高频功率放大/大集电极耗散PC
| 最大源漏极电压VdsDrain-Source Voltage | 10V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 220mA-380mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -6V |
| 耗散功率PdPower Dissipation | 1W |
| Description & Applications | High Frequency FETs. GaAs N-Channel MES FET. For UHF medium output power amplification. Features . Large collector dissipation PC. . Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 | 高频场效应管。 砷化镓N沟道MES FET。 UHF中等输出功率放大。 特点 .大集电极耗散PC。 .小功率型封装，允许瘦身套和通过自动插入磁带/盒包装。 |
| 规格书PDF |
