5LN01C N沟道MOSFET 50V 100mA/0.1A SOT-23/SC-59 marking/标记 YB 低导通电阻/超高速开关
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.8Ω/Ohm @50mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 250mW/0.25W |
| Description & Applications | N-channel Silicon MOSFET General -Purpose Switching Device Application Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. |
| 描述与应用 | N沟道硅MOSFET 通用开关设备应用程序 •低导通电阻 •超高速开关 •2.5V驱动器 |
| 规格书PDF |
