APM2318AC-TRL N沟道MOSFET 30V 3A SOT-23/SC-59 marking/标记 M18B
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
最大漏极电流Id Drain Current | 3A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.050Ω/Ohm @3A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.3V |
耗散功率Pd Power Dissipation | 830mW/0.83W |
Description & Applications | 30V/3A RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) |
描述与应用 | 30V/3A RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) |
规格书PDF |