BCR22PN NPN+PNP复合带阻尼三极管 50V/-50V 100mA/-100mA HEF=50 R1=R2=22KΩ 250mW/0.25W SOT-363/SC-88/SC70-6 标记WP 开关电路 逆变器 接口电路 驱动电路
Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
Q1集电极连续输出电流IC Collector Current(IC) | 100MA/0.1A |
Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | - 50V |
Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | - 50V |
Q2集电极连续输出电流IC Collector Current(IC) | -100MA/-0.1A |
Q1基极输入电阻R1 Input Resistance(R1) | 22KΩ |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
Q2基极输入电阻R1 Input Resistance(R1) | 22KΩ |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
直流电流增益hFE DC Current Gain(hFE) Q1/Q2 | 50/50 |
截止频率fT Transtion Frequency(fT) Q1/Q2 | 130MHZ/130MHZ |
耗散功率Pc Power Dissipation | 250MW/0.25W |
Description & Applications |
NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=22k, R2=22k)
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描述与应用 |
硅NPN / PNP型数字晶体管阵列开关电路,逆变器,接口电路,驱动电路
两个(电)内部孤立的NPN / PNP
晶体管在一个包中
建在偏置电阻(R1 = 22 k,R2 = 22 k)
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规格书PDF |