BF1005R N沟道MOSFET 8V 25mA SOT-143 marking/标记 MZ 集成偏置网络
| 最大源漏极电压Vds Drain-Source Voltage | 8V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 3V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 8-12/8-13V |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network |
| 描述与应用 | 硅N沟道MOSFET四极管 •低噪声，高增益控制 高达1 GHz的输入级 •工作电压5V •集成偏置网络 |
| 规格书PDF |
