BFQ67 NPN三极管 20V 50mA 8Ghz 100 400mV/0.4V SOT-23/SC-59 marking/标记 V2 卫星电视调谐器
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流ICCollector Current(IC) | 50mA |
截止频率fTTranstion Frequency(fT) | 7.5Ghz |
直流电流增益hFEDC Current Gain(hFE) | 65~150 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率PcPower Dissipation | 200mW/0.2W |
Description & Applications | NPN Silicon Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. |
描述与应用 | NPN硅平面RF晶体管 特点 •小反馈电容 •低噪声系数 •高转换频率 • 无铅(Pb)组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 低噪声小信号放大器高达2 GHz。这晶体管能在UHF,VHF和微波频率具有优越的噪声系数和相关增益性。 |
规格书PDF |