BSH107 N沟道MOSFET 20V 1.75A SOT-163/TSOP-6/SC-74 marking/标记 AO 低噪声增益控制放大器
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.75A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.075Ω/Ohm @1.2A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4V |
| 耗散功率Pd Power Dissipation | 417mW/0.417W |
| Description & Applications | N-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package |
| 描述与应用 | N沟道增强模式 MOS晶体管 特点符号快速参考数据 •非常低阈值电压VDS= 20 V •快速开关 •逻辑电平兼容ID=1.05 •超小型表面贴装封装 |
| 规格书PDF |
