BSS84P P沟道MOS场效应管 -60V -170mA 5.8ohm SOT-23 marking/标记 YB
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -0.17A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 5.8Ω @-170mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1--2V |
| 耗散功率PdPower Dissipation | 360mW/0.36W |
| Description & Applications | P-Channel Enhancement mode Logic Level Avalanche rated dv/dt rated |
| 描述与应用 | P沟道 增强模式 逻辑电平 额定雪崩 dv / dt的额定 |
| 规格书PDF |
