CPH3409 N沟道MOSFET 30v 5A SOT-23/SC-59 marking/标记 KJ 增强模式/逻辑电平
| 最大源漏极电压Vds Drain-Source Voltage | 30v |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10v |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.032Ω/Ohm @3A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 1.2W |
| Description & Applications | N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. |
| 描述与应用 | N-沟道硅MOSFET 超高速开关应用 •低导通电阻。 •超高速开关。 •2.5V驱动 |
| 规格书PDF |
