单向可控硅 CR05AS-4-BT1 0.62V 0.5mA SOT-89 marking/标记 CB
| 反向重复峰值电压VRRM/断态重复峰值电压VDRMRepetitive peak reverse voltage/Repetitive peak off-state voltage | 400V |
| 通态平均电流IT(AV)Average on-state current | |
| 通态最大电流IT(RMS)RMS on-state current | 0.8A |
| 栅极触发电压VGTGate trigger voltage | 0.62V |
| 栅极触发电流IGTGate trigger current | 40μA |
| 保持电流IHHolding current | 0.5mA |
| 峰值通态电压VTMOn-state voltage | 1.7V |
| 重复峰值断态电流IDRMRepetitive peak off-state current | 10μA |
| 浪涌电流ITSM(50Hz、60Hz)Current - Non Rep. Surge 50, 60Hz (Itsm) | 10A |
| Description & Applications | Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 800 V On−State Current Rating of 0.8 Amperes RMS at 80°C High Surge Current Capability — 10 A Glass-Passivated Surface for Reliability and Uniformity |
| 描述与应用 | 敏感栅 可控硅整流器 反向阻断晶闸管 敏感的门允许微控制器和其他逻辑电路的触发 阻断电压为800 V 80℃时，通态电流额定值为0.8A有效值 高浪涌电流能力 - 10 A 玻璃表面钝化的可靠性和一致性 |
| 规格书PDF |
