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FDC633N N沟道MOSFET 30V 5.2A SOT-163/SOT23-6 marking/标记 633 无二次击穿/高速开关/高输入阻抗

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最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current5.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance54mΩ@ VGS = 2.5V, ID =4.5A
开启电压Vgs(th) Gate-Source Threshold Voltage0.4~1V
耗散功率Pd Power Dissipation1.6W
Description & ApplicationsN-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package. Features SuperSOT-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.
描述与应用N沟道增强型场效应晶体管 概述 这N沟道增强型功率场效应晶体管的生产采用飞兆半导体专有的,高细胞密度,DMOS技术。这非常高密度的过程是量身定做,以尽量减少通态电阻。这些器件特别适合于低电压应用在笔记本电脑,便携式电话,PCMICA卡和其他电池供电电路中快速开关,低线的功率损耗和抗瞬变都需要在一个非常小外形表面贴装封装。 特点 的SuperSOT-6包装设计采用铜引线框架的卓越的热性能和电气性能。 高密度电池设计极低的RDS(ON) 卓越的导通电阻和最大DC电流能力。
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