我的订单
分享到:
当前位置:首页 > 现货库存 > 商品详情

FDG6301N 复合场效应管 25V 220mA/0.22A SOT-363/SC70-6 marking/标记 PA 双N沟道 数字FET

热销商品

产品描述
最大源漏极电压VdsDrain-Source Voltage25V
最大栅源极电压Vgs(±)Gate-Source Voltage8V
最大漏极电流IdDrain Current220mA/0.22A
源漏极导通电阻RdsDrain-Source On-State Resistance5Ω@ VGS = 2.7V, ID =190mA
开启电压Vgs(th)Gate-Source Threshold Voltage0.65~1.5V
耗散功率PdPower Dissipation300mW/0.3W
Description & ApplicationsDual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features Very low level gate drive requirements allowing direct operation in 3 V circuits . Compact industry standard SC70-6 surface mount package.
描述与应用双N沟道,数字FET 概述    这些双N沟道逻辑电平增强模式场效应晶体管都采用飞兆半导体专有的,高细胞密度,DMOS技术生产。这非常高密度的过程特别是针对减少通态电阻。该器件设计,尤其是作为一个替代双极数字晶体管和小信号MOSFET的低电压应用。 特点 非常低的水平栅极驱动要求可直接操作3 V电路。 紧凑型工业标准SC70-6表面贴装封装。
规格书PDF
相关型号列表

备案/许可证号:粤ICP备14038557号 Copyright ©: 2017 爱瑞凯电子商城版权所有 并保留所有权利
客服电话0755-88869068
工作时间:周一至周六 8:00~22:00