fdw262p-nl P沟道MOS场效应管 -20V -4.5A 0.037ohm Vth:-0.4--1.5V SOP-8 marking/标记 g27 262p
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -4.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.037Ω @-4.5A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4--1.5V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | • RDS(ON) rated for use with 1.8 V logic • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package |
| 描述与应用 | 使用额定电压为1.8 V逻辑与 •低栅极电荷（13nC典型值） •高性能沟道技术极 低RDS（ON） •低调TSSOP-8封装 |
| 规格书PDF |
