FMG3 NPN+NPN复合带阻尼三极管 50V 100mA 100~600 300mW/0.3W SOT-153/SMT5/SC-74A/SOT23-5 标记G3 开关电路 逆变器 接口电路 驱动电路
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~600 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | Features •Emitter common(dual digital transistors) •Two DTC143T chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •发射极普通的（双数字晶体管） •两个DTC143T的在EMT或UMT或SMT封装的芯片。 •安装成本和面积可减少一半 |
| 规格书PDF |
