FQD3P20TF P沟道MOS场效应管 -200V -1.52A 2.06ohm SOT-252 marking/标记 3P20 快速开关
| 最大源漏极电压VdsDrain-Source Voltage | -200V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 30V |
| 最大漏极电流IdDrain Current | -1.52A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2.06Ω @-1.2A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -3.0--5.0V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | • -2.4A, -200V, RDS(on)= 2.7Ω @VGS = -10 V • Low gate charge ( typical 6.0 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability |
| 描述与应用 | •低栅极电荷（典型6.0 nC） •低Crss（典型7.5 pF） •快速开关 •100％雪崩测试 •改进的dv / dt能力“ |
| 规格书PDF |
