FZT849TA NPN三极管 80V 7A 100MHz 100~300 350mV/0.35V SOT-223 marking/标记 高电流（高性能）晶体管
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流ICCollector Current(IC) | 7A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 350mV/0.35V |
| 耗散功率PcPower Dissipation | 3W |
| Description & Applications | SOT223 NPN SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTOR Extremely low equivalent on-resistance 7 Amp continuous collector current (20 Amp peak) Very low saturation voltages Excellent gain charateristics specified upto 20 Amp COMPLEMENTARY TYPE - FZT949 |
| 描述与应用 | SOT223 NPN硅平面高电流（高性能）晶体管 极低的等效导通电阻 7安培连续集电极电流（20安培峰值） 极低的饱和电压 出色的增益高达20安培的特征简介 互补型 - FZT949 |
| 规格书PDF |
