H7P1002DS90TR P沟道MOS场效应管 -100V -1.5A 0.0085ohm SOT-252 marking/标记 7P1002
最大源漏极电压VdsDrain-Source Voltage | -100V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 30V |
最大漏极电流IdDrain Current | -1.5A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.0085Ω @-7.5A,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1.0--2.5V |
耗散功率PdPower Dissipation | 3W |
Description & Applications | • Low on-resistance RDS(on) = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source |
描述与应用 | •低导通电阻 RDS(ON)=85MΩ(典型值)。 •低驱动电流 •4.5 V门驱动装置可以从5 V电源驱动 |
规格书PDF |