HAT1053M-EL P沟道MOS场效应管 -20V -5.5A 0.034ohm SOT-163 marking/标记 1053 低导通电阻 低驱动电流
最大源漏极电压VdsDrain-Source Voltage | -20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
最大漏极电流IdDrain Current | -5.5A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.034Ω @-3A,-4.5V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.4--1.4V |
耗散功率PdPower Dissipation | 2W |
Description & Applications | Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device |
描述与应用 | •低导通电阻 •低驱动电流 •高密度安装 •2.5 V门驱动装置 |
规格书PDF |