HAT1069C-EL-E P沟道MOS场效应管 -12V -4A 0.038ohm SOT-363 marking/标记 VY 高速开关 1.8V驱动
最大源漏极电压VdsDrain-Source Voltage | -12V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
最大漏极电流IdDrain Current | -4A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 0.038Ω @-1.5A,-4.5V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.3--1.2V |
耗散功率PdPower Dissipation | 900mW/0.9W |
Description & Applications | Features • Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive • High density mounting |
描述与应用 | •低导通电阻 RDS(ON) =38MΩ典型值(VGS=-4.5 V) •高速开关 •能够为1.8V栅极驱动 •高密度安装 |
规格书PDF |