HAT2054M N沟道MOSFET 30V 6.3A SOT-163/TSOP-6 marking/标记 2054 极低的RDS/低栅极电荷
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.031Ω/Ohm @3A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.5v |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | • Low on-resistance • Low drive current • High density mounting • 4.5V gate drive device can be driven from 5V source |
| 描述与应用 | •低导通电阻 •低驱动电流 •高密度安装 •4.5V栅极驱动器可驱动5V电源 |
| 规格书PDF |
