IRF5803TR P沟道MOS场效应管 -40V -3.4A 0.112ohm SOT-163 marking/标记 G6 低导通电阻 低栅极电荷
| 最大源漏极电压VdsDrain-Source Voltage | -40V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | |
| 最大漏极电流IdDrain Current | -3.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.112Ω @-3.4A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--3V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 P沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 |
| 规格书PDF |
