IRLML6401TR P沟道MOS场效应管 -430mA 0.050ohm SOT-23 marking/标记 F1/F3/F4/F5/F6/FB/FE 超低导通电阻 薄型封装
| 最大源漏极电压VdsDrain-Source Voltage | |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -12V |
| 最大漏极电流IdDrain Current | -430mA/-0.43A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.050Ω @-4.3A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.40--0.95V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel |
| 描述与应用 | 超低导通电阻 P沟道MOSFET SOT-23的脚印 薄型（高度<1.1mm） 可在磁带和卷轴 |
| 规格书PDF |
