MGSF3433VT1 P沟道MOS场效应管 -20V -5.6A 34毫欧 SOT-163 marking/标记 3T
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -5.6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 34mΩ@ VGS = -4.5V, ID = -5.6A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V~-0.85V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | P-Channel 1.8-V (G-S) MOSFET |
| 描述与应用 | P沟道1.8-V（G-S）的MOSFET |
