MMBF0201NLT1 N沟道MOSFET 20V 300mA/0.3A SOT-23/SC-59 marking/标记 N1 高速开关/低导通电阻/低电压驱动
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 300mA/0.3A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.75Ω/Ohm @300mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.0-2.4V |
耗散功率Pd Power Dissipation | 225mW/0.225W |
Description & Applications | DPAK For Surface Mount Applications • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available |
描述与应用 | DPAK表面贴装应用 •低的RDS(on) 提供更高的效率和延长电池寿命 •微型SOT-23表面贴装封装节省电路板空间 •无铅包装是可用 |
规格书PDF |