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MRF9331LT1 NPN三极管 15V 2mA 5GHz 30~200 SOT-143 marking/标记 05V RF线NPN硅高频晶体管

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产品描述
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)15V
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)8V
集电极连续输出电流ICCollector Current(IC)2mA
截止频率fTTranstion Frequency(fT)5GHz
直流电流增益hFEDC Current Gain(hFE)30~200
管压降VCE(sat)Collector-Emitter Saturation Voltage
耗散功率PcPower Dissipation50mW
Description & Applications• The RF Line NPN Silicon High-Frequency Transistors Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is critical. • Low Power Consumption Characterized for IE = 0.1 to 1.0 mA • High Current–Gain — Bandwidth Product — fT = 5.0 GHz (Typ) @ IC = 1.0 mAdc • Low Noise Figure and High Power Gain @ f = 1.0 GHz — NF(matched) = 2.5 dB (Typ) GNF(matched) = 12.5 dB (Typ) • Guaranteed RF Parameters • Surface Mounted SOT–143 Offers Improved RF Performance Lower Package Parasitics High Gain • Available in tape and reel packaging: T1 suffix = 3,000 units per reel
描述与应用•RF线NPN硅高频晶体管 设计主要用于到1.0 GHz的低功耗放大器。非常适于 传呼机和其他低功耗电池供电系统 关键的。 •低功耗的特点IE=0.1〜1.0毫安 •高电流增益 - 带宽积 - FT= 5.0千兆赫(典型值)@ IC=1.0 MADC •低噪声指数和高功率增益@ F =1.0 GHz的 - NF(匹配)=2.5分贝(典型值) GNF(匹配)=12.5分贝(典型值) •保证的射频参数 •表面贴装SOT-143提供了改进的RF性能 较低的封装寄生效应 高增益 •可在磁带和卷轴包装: T1后缀=3000单位每卷
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