MT6L58AFS NPN+NPN复合三极管 10V 15mA/40mA 70~140/80~160 10GHZ SOT-563/ES6 标记15 用于开关/数字电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5V |
集电极连续输出电流IC Collector Current(IC) | 15mA/40mA |
直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
70~140/80~160 |
截止频率fT Transtion Frequency(fT) | 10GHZz |
耗散功率Pc Power Dissipation | 0.1W |
Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Planar Type • Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. • VHF~UHF Band Low Noise Amplifier Applications • Superior noise characteristics • Superior performance in buffer and oscillator applications. |
描述与应用 | 特点 •东芝晶体管NPN硅外延平面型 •两个设备都成立于细间距,小型模具包(6针):FS6。 •VHF〜UHF频段低噪声放大器的应用 •高级噪声特性 •缓冲和振荡器的应用中的卓越性能 |
规格书PDF |