MTM231230L P沟道MOS场效应管 -20V -3A 0.04ohm SOT-323 marking/标记 BL 低电压驱动 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.04Ω @-1A,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4--1.3V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | Features Low voltage drive (1.8 V, 2.5 V, 4 V) Realization of low on-resistance, using extremely fine process Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package |
| 描述与应用 | 低电压驱动（1.8 V，2.5 V，4 V） 实现低导通电阻，用极其精细的过程 集小型化，减少元件数量。 环保无卤素封装 |
| 规格书PDF |
