NE32584C-T1 MESFET-N沟道 4V 20mA-90mA -0.2V -- -2.0V + marking/标记 D 高频应用
| 最大源漏极电压VdsDrain-Source Voltage | 4V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -3V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 20mA-90mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2V -- -2.0V |
| 耗散功率PdPower Dissipation | 165mW/0.165W |
| Description & Applications | HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER Super Low Noise Figure & High Associated Gain |
| 描述与应用 | 异质结型场效应晶体管 C到Ku波段超低噪声放大器 超级低噪声系数和高相关的收益 |
| 规格书PDF |
