NE32584C-T1 MESFET-N沟道 4V 20mA-90mA -0.2V -- -2.0V + marking/标记 D 高频应用
最大源漏极电压VdsDrain-Source Voltage | 4V |
栅源极击穿电压V(BR)GSGate-Source Voltage | -3V |
漏极电流(Vgs=0V)IDSSDrain Current | 20mA-90mA |
关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2V -- -2.0V |
耗散功率PdPower Dissipation | 165mW/0.165W |
Description & Applications | HETERO JUNCTION FIELD EFFECT TRANSISTOR C to Ku BAND SUPER LOW NOISE AMPLIFIER Super Low Noise Figure & High Associated Gain |
描述与应用 | 异质结型场效应晶体管 C到Ku波段超低噪声放大器 超级低噪声系数和高相关的收益 |
规格书PDF |