NTA4001NT1 N沟道MOSFET 20V 238mA/0.238A SOT-523/SC-75 marking/标记 TF2 小功率损耗/低的RDS
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 238mA/0.238A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.5Ω/Ohm @10mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.5V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Power Management Load Switch •Level Shift •Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA's, Video Games, Hand Held Computers, etc. Features • Low Gate Charge for Fast Switching • Small 1.6 X 1.6 mm Footprint • ESD Protected Gate • Pb−Free Package for “Green Manufacturing” Compliance |
| 描述与应用 | 小信号MOSFET 20 V，238 mA时，单N沟道，门ESD保护，SC-75 电源管理负载开关 •电平转换 •便携式应用，如手机，媒体播放器， 数码相机，掌上电脑，电子游戏，手持电脑等。 •低栅极电荷快速开关 •小型1.6×1.6 mm迹 •ESD保护门 •“绿色制造”的合规性的无铅封装 |
| 规格书PDF |
