NTHS2101PT1G P沟道MOS场效应管 -8V -5.4A 0.019ohm Vth:-0.45--1.5V 1206-8 marking/标记 D4 1.8V栅极电压 便携式设备应用
| 最大源漏极电压VdsDrain-Source Voltage | -8V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -5.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.019Ω @-5.4A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45--1.5V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | Features • Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics • Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics • Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required • Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology • Pb−Free Package is Available |
| 描述与应用 | •薄型（<1.1毫米）允许它能够轻松融入极薄 环境，如便携式电子产品 •专为提供低RDS（ON） 低栅极电压为1.8 V， 用于便携式电子产品在许多逻辑IC的工作电压 •简化电路设计，因为其他的门电路升压 电压不 •工作在标准逻辑电平栅极驱动，有利于未来 迁移到下级使用相同的基本拓扑结构 •无铅包装是可用 |
| 规格书PDF |
