PMV31XN N沟道MOSFET 20V 5.9A SOT-23/SC-59 marking/标记 WM4 低RDS/高饱和电流能力
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 5.9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package |
| 描述与应用 | 开关速度非常快 低阈值电压 表面贴装型封装 |
| 规格书PDF |
