RHK003N06 N沟道MOSFET 60v 11A TO-252/D-PAK marking/标记 RKS 低噪声
| 最大源漏极电压Vds Drain-Source Voltage | 60v |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16v |
| 最大漏极电流Id Drain Current | 11A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.107Ω/Ohm @8A,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 38W |
| Description & Applications | 4V Drive Nch MOS FET Silicon N-channel MOS FET Features • 11A, 60V • rDS(ON) = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature TB334 “Guidelines for Soldering Surface Mount Components to PC Boards |
| 描述与应用 | 4V驱动N沟道MOS FET 硅N沟道MOS FET •温度补偿的PSPICE模型 •峰值电流与脉冲宽度曲线 •UIS等级曲线 •相关文献 TB334“指南焊锡表面装载 组件到PC板 |
| 规格书PDF |
